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STK13003 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

General Description

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability.

It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

SOT-82 Figure 1.

Key Features

  • STK13003 is reverse pin out versus standard SOT-82 package.
  • High voltage capability.
  • Low spread of dynamic parameters.
  • Minimum lot-to-lot spread for reliable operation.
  • Very high switching speed.

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STK13003 High voltage fast-switching NPN power transistor Features ■ STK13003 is reverse pin out versus standard SOT-82 package ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting (CFL) ■ SMPS for battery charger Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. SOT-82 Figure 1. Internal schematic diagram Table 1.