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STK20N3LLH5 - N-channel Power MOSFET

Description

This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology.

Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.

Table 1.

Features

  • Type STK20N3LLH5.
  • VDSS 30 V RDS(on) max < 0.007 Ω RDS(on).
  • Qg 68 nC.
  • mΩ Ultra low top and bottom junction to case thermal resistance RDS(on).
  • Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge Fully encapsulated die 100% matte tin finish (in compliance with the 2002/95/EC european directive) High avalanche ruggedness PolarPAK® is a trademark of VISHAY Figure 1. Internal schematic diagram PolarPAK®.

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Datasheet Details

Part number STK20N3LLH5
Manufacturer STMicroelectronics
File Size 362.26 KB
Description N-channel Power MOSFET
Datasheet download datasheet STK20N3LLH5 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com STK20N3LLH5 N-channel 30 V, 0.006 Ω , 20 A, PolarPAK® STripFET™V Power MOSFET Preliminary Data Features Type STK20N3LLH5 ■ ■ ■ ■ ■ ■ ■ ■ VDSS 30 V RDS(on) max < 0.007 Ω RDS(on)*Qg 68 nC*mΩ Ultra low top and bottom junction to case thermal resistance RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge Fully encapsulated die 100% matte tin finish (in compliance with the 2002/95/EC european directive) High avalanche ruggedness PolarPAK® is a trademark of VISHAY Figure 1. Internal schematic diagram PolarPAK® Application ■ Switching applications Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology.
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