STK2NA60 Datasheet - ST Microelectronics

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STK2NA60 General Description

This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS s HIGH CURRENT, H.

STK2NA60 Datasheet (178.06 KB)

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STK2NA60

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STMicroelectronics ↗

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N - channel enhancement mode fast power mos transistor.
STK2NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STK2NA60 s s s s s s s V DSS 600 V R DS( on) < 8Ω ID 1.9 A TYPICAL RDS(on) = .

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STK2NA60 CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ST Microelectronics

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STK2NA60 General Description

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