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STK2NA60 Datasheet

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

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STK2NA60
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
ST K 2NA 60
VDSS
600 V
R DS( on)
<8
ID
1.9 A
s TYPICAL RDS(on) = 7.2
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INTRINSIC CAPACITANCES
s GATE GHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The op-
timized cell layout coupled with a new proprietary
edge termination concur to give the device low
RDS(on) and gate charge, unequalled ruggedness
and superior switching performance.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
12
SOT-82
3
2
1
SOT-194
(option)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S Drain-source Voltage (VGS = 0)
VDG R Drain- gate Voltage (RGS = 20 k)
VGS Gate-source Voltage
ID Drain Current (continuous) at T c = 25 oC
ID Drain Current (continuous) at T c = 100 oC
ID M()
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
November 1996
Value
600
600
± 30
1.9
1.2
7.6
50
0.4
-65 to 150
150
Unit
V
V
V
A
A
A
W
W /o C
oC
oC
1/10


STMicroelectronics Electronic Components Datasheet

STK2NA60 Datasheet

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

No Preview Available !

STK2NA60
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max 2.5 oC/W
Rthj-amb Thermal Resistance Junction-ambient
Max 80 oC/W
Rthj-amb Thermal Resistance Case-sink
Typ 0.7 oC/W
Tl Maximum Lead Temperature For Soldering Purpose
275 oC
AVALANCHE CHARACTERISTICS
Symb ol
IA R
EAS
EAR
IA R
Pa ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(st arting Tj = 25 oC, ID = IAR, VD D = 50 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
Max Value
1.9
18
0.7
1.2
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Conditions
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA VG S = 0
IDSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 oC
IG SS
Gate-body Leakage
Current (VD S = 0)
VGS = ± 30 V
Min.
600
Typ.
Max.
Unit
V
25
250
± 100
µA
µA
nA
ON ()
Symb ol
VG S(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 1 A
R esist anc e
On St ate Drain Current VDS > ID( on) x RD S(on) max
VGS = 10 V
Min.
2. 25
Typ.
3
7.2
Max.
3. 75
8
Unit
V
1.4 A
DYNAMIC
Symb ol
gfs ()
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID( on) x RD S(on) max ID = 1 A
VDS = 25 V f = 1 MHz VG S = 0
Min.
0. 65
Typ.
1.2
Max.
Unit
S
230 300
42 55
10 15
pF
pF
pF
2/10


Part Number STK2NA60
Description N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Maker ST Microelectronics
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