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STL15N60M2-EP Datasheet

N-channel Power MOSFET

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STL15N60M2-EP
Datasheet
N-channel 600 V, 0.390 Ω typ., 7 A MDmesh™ M2 EP
Power MOSFET in a PowerFLAT™ 5x6 HV package
1
2
3
4
PowerFLAT™ 5x6 HV
D(5, 6, 7, 8)
8 76 5
Features
Order code
VDS @ TJmax RDS(on) max.
STL15N60M2-EP
650 V
0.418 Ω
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• Very low turn-off switching losses
• 100% avalanche tested
• Zener-protected
ID
7A
Applications
G(4) • Switching applications
• Tailored for very high frequency converters (f > 150 kHz)
PTOT
55 W
S(1, 2, 3)
12 34
Top View
AM15540v1
Description
This device is an N-channel Power MOSFET developed using MDmesh™
M2 enhanced performance (EP) technology. Thanks to its strip layout and an
improved vertical structure, the device exhibits low on-resistance, optimized switching
characteristics with very low turn-off switching losses, rendering it suitable for the
most demanding very high frequency converters.
Product status
STL15N60M2-EP
Product summary
Order code
STL15N60M2-EP
Marking
15N60M2E
Package
PowerFLAT™ 5x6 HV
Packing
Tape and Reel
DS11101 - Rev 3 - May 2018
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

STL15N60M2-EP Datasheet

N-channel Power MOSFET

No Preview Available !

1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
Drain current (continuous) at Tcase = 25 °C
ID
Drain current (continuous) at Tcase = 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total dissipation at Tcase = 25 °C
IAR (2)
Avalanche current, repetitive or not repetitive
EAS (3)
Single pulse avalanche energy
dv/dt(4)
Peak diode recovery voltage slope
dv/dt(5)
MOSFET dv/dt ruggedness
Tstg Storage temperature range
Tj Operating junction temperature range
1. Pulse width is limited by safe operating area.
2. Pulse width limited by Tjmax.
3. starting Tj = 25 °C, ID = IAR, VDD = 50 V.
4. ISD ≤ 7 A, di/dt = 400 A/μs; VDS peak < V(BR)DSS, VDD = 400 V.
5. VDS ≤ 480 V.
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-pcb (1)
Thermal resistance junction-pcb
1. When mounted on a 1-inch² FR-4, 2 Oz copper board.
STL15N60M2-EP
Electrical ratings
Value
±25
7
4.6
28
55
1.5
110
15
50
-55 to 150
Unit
V
A
A
W
A
mJ
V/ns
°C
Value
2.27
59
Unit
°C/W
DS11101 - Rev 3
page 2/16


Part Number STL15N60M2-EP
Description N-channel Power MOSFET
Maker STMicroelectronics
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STL15N60M2-EP Datasheet PDF






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