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STMicroelectronics Electronic Components Datasheet

STL160N3LLH6 Datasheet

N-channel Power MOSFET

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STL160N3LLH6 pdf
STL160N3LLH6
N-channel 30 V, 0.0011 Ω, 35 A PowerFLAT™ 5x6
STripFET™ VI DeepGATE™ Power MOSFET
Features
Order code
STL160N3LLH6
VDSS
30 V
RDS(on)
max
0.0013 Ω
ID
35 A (1)
1. The value is rated according Rthj-pcb
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
Very low switching gate charge
High avalanche ruggedness
Low gate drive power losses
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest RDS(on) in all packages.
1
2
3
4
PowerFLAT™ 5x6
Figure 1. Internal schematic diagram

 
$$$$
'333
 
"OTTOM6IEW
 
4OP6IEW
!-6
Table 1. Device summary
Order code
Marking
STL160N3LLH6
160N3LLH6
Package
PowerFLAT™ 5x6
Packaging
Tape and reel
November 2011
Doc ID 18223 Rev 2
1/16
www.st.com
16


STMicroelectronics Electronic Components Datasheet

STL160N3LLH6 Datasheet

N-channel Power MOSFET

No Preview Available !

STL160N3LLH6 pdf
Contents
Contents
STL160N3LLH6
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16 Doc ID 18223 Rev 2


Part Number STL160N3LLH6
Description N-channel Power MOSFET
Maker STMicroelectronics
Total Page 16 Pages
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