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STL25N60M2-EP Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

General Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 EP enhanced performance technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.

Table 1: Device summary Marking Package 25N60M2EP PowerFLAT™ 8x8 HV Packaging Tape and reel November 2015 DocID027254 Rev 3 This is information on a product in full production.

Overview

STL25N60M2-EP N-channel 600 V, 0.184 Ω typ., 16 A MDmesh™ M2 EP Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet - production.

Key Features

  • Order code VDS @ TJmax RDS(on) max. ID 5 STL25N60M2-EP 650 V 0.206 Ω 16 A 4 32 1 PowerFLAT™ 8x8 HV Figure 1: Internal schematic diagram.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • Very low turn-off switching losses.
  • 100% avalanche tested.
  • Zener-protected.