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STL30N10F7 - N-CHANNEL POWER MOSFET

Description

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

  • PowerFLAT 5x6 Order code VDS RDS(on) max. ID STL30N10F7 100 V 0.035 Ω 8A.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness PTOT 4.8 W D(5, 6, 7, 8) 8 76 5.

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Datasheet Details

Part number STL30N10F7
Manufacturer STMicroelectronics
File Size 896.29 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet STL30N10F7 Datasheet
Additional preview pages of the STL30N10F7 datasheet.

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Full PDF Text Transcription

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STL30N10F7 Datasheet N-channel 100 V, 0.027 Ω typ., 8 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package Features PowerFLAT 5x6 Order code VDS RDS(on) max. ID STL30N10F7 100 V 0.035 Ω 8A • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness PTOT 4.8 W D(5, 6, 7, 8) 8 76 5 Applications • Switching applications G(4) Description S(1, 2, 3) 12 34 Top View AM15540v2 This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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