STL30P3LLH6 Datasheet, STMicroelectronics

Order code VDS RDS(on) max. ID STL30P3LLH6 30 V 30 mΩ 9A
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low gate d.

* Switching applications AM01475v4 Description This device is a P-channel Power MOSFET developed using the STripFE.

This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STL30P3LLH6 Product summary Order code .