STL30P3LLH6 Description
This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. STL30P3LLH6 Electrical ratings 1 Note:.
STL30P3LLH6 Key Features
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss