STL36DN6F7 Datasheet, STMicroelectronics

Order code STL36DN6F7 VDS 60 V RDS(on) max 27 mΩ ID 33 A
* Among the lowest RDS(on) on the market
* Excellent figure of merit (FoM)
* Low Crss/Ciss ratio .

* Switching applications Description This dual N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhan.

This dual N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. O.