Datasheet Summary
Automotive-grade N-channel 60 V, 24 mΩ typ., 10 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 double island package
1 S2
Drain on rear side
2 G2
8 D2
3 S1 4 G1
6 D1
Features
Order code
RDS(on) max.
60 V
27 mΩ
10 A
- AEC-Q101 qualified
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Applications
- Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge...