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STL80N75F6 - N-CHANNEL POWER MOSFET

General Description

developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Table 1.

Key Features

  • 1 2 3 4 PowerFLAT™ 5x6 Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) Order code STL80N75F6 VDS 75 V RDS(on) max 5.5 mΩ.
  • Low gate charge.
  • Very low on-resistance.
  • High avalanche ruggedness ID 18 A.

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STL80N75F6 N-channel 75 V, 4.5 mΩ typ., 18 A STripFET™ DeepGATE™ VI Power MOSFET in PowerFLAT™ 5x6 package Datasheet - production data Features 1 2 3 4 PowerFLAT™ 5x6 Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) Order code STL80N75F6 VDS 75 V RDS(on) max 5.5 mΩ • Low gate charge • Very low on-resistance • High avalanche ruggedness ID 18 A Applications • Switching applications Description This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. S(1, 2, 3) 12 34 Top View AM15540v2 Order code STL80N75F6 Table 1.