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STL8DN6LF6AG Datasheet Automotive-grade dual N-channel MOSFET

Manufacturer: STMicroelectronics

General Description

S1(1) S2(3) This device is a dual N-channel Power MOSFET developed using the STripFET F6 SC12820 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Product status link STL8DN6LF6AG Product summary Order code STL8DN6LF6AG Marking 8DN6LF6 Package PowerFLAT 5x6 double island Packing Tape and reel DS11120 - Rev 5 - July 2021 For further information contact your local STMicroelectronics sales office.

Overview

STL8DN6LF6AG Datasheet Automotive-grade dual N-channel 60 V, 21 mΩ typ.

Key Features

  • Order code STL8DN6LF6AG VDS 60 V RDS(on) max. 27 mΩ ID 32 A 4 3 2 1 PowerFLAT 5x6 double island D1(7, 8) D2(5, 6).
  • AEC-Q101 qualified.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss.
  • Wettable flank package PTOT 55 W G1(2) G2(4).