• Part: STN851-A
  • Description: low voltage fast-switching NPN power transistor
  • Category: Transistor
  • Manufacturer: STMicroelectronics
  • Size: 267.87 KB
Download STN851-A Datasheet PDF
STMicroelectronics
STN851-A
STN851-A is low voltage fast-switching NPN power transistor manufactured by STMicroelectronics.
Features - - - - - AEC Q101 pliant Very low collector to emitter saturation voltage High current gain characteristic Fast-switching speed Surface-mounting SOT-223 power package in tape and reel 1 2 4 SOT-223 Applications - High efficiency low voltage switching applications Figure 1. Internal schematic diagram Description The device is manufactured in planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Table 1. Device summary Marking N851 Package SOT-223 Packaging Tape and reel Order code STN851-A March 2009 Rev 1 1/10 .st. 10 Electrical ratings .. Electrical ratings Table 2. Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Tstg TJ Absolute maximum ratings Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (t P < 5 ms) Base current Base peak current (t P < 5 ms) Total dissipation at Tamb = 25 °C Storage temperature Max. operating junction temperature Value 150 60 7 5 10 1 2 1.6 -65 to 150 150 Unit V V V A A A A W °C °C Table 3. Symbol Rthj-amb Thermal data Parameter Thermal resistance junction-ambient (1) Value 78 Unit °C/W 1. Device mounted on a p.c.b. area of 1 cm2 2/10 Electrical characteristics .. Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. Symbol ICBO Electrical characteristics Parameter Collector cut-off current (IE = 0) Emitter cut-off current (IC = 0) Collector-base breakdown voltage (IE = 0) Test conditions VCB = 120 V VCB = 120 V Tc = 100 C VEB = 7 V...