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STO33N60M6 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STO33N60M6 Datasheet N-channel 600 V, 105 mΩ typ., 25 A, MDmesh M6 Power MOSFET in a TO‑LL package TO-LL type A Drain (TAB) Gate(1) Driver source (2) Power source (3, 4, 5, 6, 7,8) N-chG1DS2PS345678DTABZ Product status.

General Description

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.

STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

DS12688 - Rev 2 - May 2021 For further information contact your local STMicroelectronics sales office.

Key Features

  • Order code VDS RDS(on) max. ID STO33N60M6 600 V 125 mΩ 25 A.
  • Reduced switching losses.
  • Lower RDS(on) per area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected.
  • Excellent switching performance thanks to the extra driving source pin.

STO33N60M6 Distributor