STMicroelectronics STO67N60DM6
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast‑recovery diode series.STO67N60DM6 Specifications
- RDS(on) Max : 59mΩ
- Drain-Source Voltage : 600V
- Terminals : 8
- Max Power Dissipation : 240W
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | STO67N60DM6 |
|---|---|
| Datasheet | STO67N60DM6 Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V 55A N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STO67N60DM6 VDS 600 V RDS(on) max. 59 mΩ ID 55 A● Fast-recovery body diode
● Lower RDS(on) per area vs previous generation
● Low gate charge, input capacitance and resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected
● Excellent switching performance thanks to the extra driving source pin
APPLICATIONS
● Switching applicationsDESCRIPTION
Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STO67N60DM6 Product summary Order code STO67N60DM6 Marking 67N60DM6 Package Packing TO‑LL Tape and reel DS13219 - Rev 6 - May 2026 For further information, contact your local STMicroelectronics sales office. Prerelease product(s) STO67N60DM6 Electrical ratings 1 Electrical ratings Table 1.
