STO67N60DM6 Datasheet - STMicroelectronics

N-channel Power MOSFET

STO67N60DM6 Features

* Order code VDS RDS(on) max. ID STO67N60DM6 600 V 59 mΩ 58 A

* Fast-recovery body diode

* Lower RDS(on) per area vs previous generation

* Low gate charge, input capacitance and resistance

* 100% avalanche tested

* Extremely high dv/dt ruggedness

STO67N60DM6 General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching beh.

STO67N60DM6 Datasheet (1.52 MB)

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Datasheet Details

Part number:

STO67N60DM6

Manufacturer:

STMicroelectronics ↗

File Size:

1.52 MB

Description:

N-channel power mosfet.
STO67N60DM6 Datasheet N-channel 600 V, 48 mΩ typ., 58 A MDmesh DM6 Power MOSFET in a TO‑LL package TO-LL type A2 Drain (TAB) Gate(1) Driver source .

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STO67N60DM6 Features

STO67N60DM6 General Description

Datasheet Details

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