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STP100N6F7 Datasheet - STMicroelectronics

N-CHANNEL POWER MOSFET

STP100N6F7 Features

* Order code VDS RDS(on) max. ID PTOT STP100N6F7 60 V 5.6 mΩ 100A 125 W TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram '7$%

* Among the lowest RDS(on) on the market

* Excellent figure of merit (FoM)

* Low Crss/Ciss ratio for EMI immunity

* High av

STP100N6F7 General Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 6 $0Y Order code STP100N6F7 Table 1. Device .

STP100N6F7 Datasheet (496.09 KB)