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STP105N3LL Description

This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 6  $0Y Order code STP105N3LL Table.

STP105N3LL Key Features

  • RDS(on)
  • Qg industry benchmark
  • Extremely low on-resistance RDS(on)
  • High avalanche ruggedness
  • Low gate drive power losses