* Type VDSS RDS(on) max ID Pw STF10N62K3 STFI10N62K3 STI10N62K3 STP10N62K3 620 V < 0.75 Ω 8.4 A(1) 8.4 A 30 W 125 W 1. Limited by package
* 100% avalanche tested
* Extremely high dv/dt capability
* Gate charge minimized
* Very low intrinsic capacitances
* Improved diode
STP10N62K3 Datasheet (484.98 KB)
STP10N62K3
484.98 KB
N-channel power mosfet.
STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 N-channel 620 V, 0.68 Ω typ., 8.4 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 packa.
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