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STP10NB20 Datasheet N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

Manufacturer: STMicroelectronics

General Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/ dt capabilities and unrivalled gate charge and switching characteristics.

APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ ■ Figure 2.

Overview

( DataSheet : www.DataSheet4U.com ) N-CHANNEL 200V - 0.25 Ω - 10A TO-220/TO-220FP PowerMESH™ MOSFET Table 1.

Key Features

  • Type STP10NB20 STP10NB20FP VDSS 200 V 200 V RDS(on) < 0.40 Ω < 0.40 Ω ID 10 A 6A STP10NB20 STP10NB20FP Figure 1. Package.