STP10NB20 Key Features
- TYPICAL RDS(on) = 0.25 Ω
- Part: STP10NB20
- Manufacturer: STMicroelectronics (official site)
- Size: 195.73 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STP10NB20FP | N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
| STP10NB50 | N-CHANNEL Power MOSFET |
| STP10NB50FP | N-CHANNEL Power MOSFET |
| STP10N10L | N-Channel Enhancement Mode Low Threshold Power MOS Transistor |
| STP10N10LFI | N-Channel Enhancement Mode Low Threshold Power MOS Transistor |
STP10NB20 Description
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/ dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS HIGH CURRENT,...