STP110N7F6 - N-CHANNEL POWER MOSFET

STMicroelectronics

Datasheet Details

Part number	STP110N7F6
Manufacturer	STMicroelectronics ↗
File Size	626.27 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	STP110N7F6-STMicroelectronics.pdf

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

Order code VDS RDS(on)max. ID PTOT TAB STP110N7F6 68 V 0.0065 Ω 110 A 176 W 3 2 1 TO-220 Figure 1. Internal schematic diagram '7$%.
.
Very low on-resistance.
Very low gate charge.
High avalanche ruggedness.
Low gate drive power loss.

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Published: Jan 22, 2019 |