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STP11NB40FP - N-CHANNEL PowerMESH MOSFET

Download the STP11NB40FP datasheet PDF. This datasheet also covers the STP11NB40 variant, as both devices belong to the same n-channel powermesh mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

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Note: The manufacturer provides a single datasheet file (STP11NB40_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STP11NB40 N-CHANNEL PowerMESH MOSFET
STP11NC40 N-CHANNEL Power MOSFET
STP11NC40FP N-CHANNEL Power MOSFET
STP11NK40Z N-CHANNEL Power MOSFET
STP11NK40ZFP N-CHANNEL Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com ® STP11NB40 STP11NB40FP N - CHANNEL 400V - 0.48Ω - 10.7A - TO-220/TO-220FP PowerMESH™ MOSFET TYPE ST P11NB40 ST P11NB40FP s s s s s V DSS 400 V 400 V R DS(on) < 0.55 Ω < 0.55 Ω ID 10.7 A 6.0 A TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dV/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 1 2 3 1 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
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