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STP11NK50Z - N-CHANNEL Power MOSFET

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features

  • Type STB11NK50Z STP11NK50ZFP STP11NK50Z VDSS 500 V 500 V 500 V RDS(on) max ID Pw < 0.52 Ω 10 A 125 W < 0.52 Ω 10 A 30 W < 0.52 Ω 10 A 125 W.
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitances.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB11NK50Z - STP11NK50ZFP STP11NK50Z N-channel 500 V, 0.48 Ω , 10 A TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET Features Type STB11NK50Z STP11NK50ZFP STP11NK50Z VDSS 500 V 500 V 500 V RDS(on) max ID Pw < 0.52 Ω 10 A 125 W < 0.52 Ω 10 A 30 W < 0.52 Ω 10 A 125 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances Application ■ Switching applications Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. 3 2 1 TO-220 3 1 D2PAK 3 2 1 TO-220FP Figure 1.
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