STP11NM50N mosfet equivalent, n-channel power mosfet.
Order codes STD11NM50N STF11NM50N STP11NM50N
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VDSS @TJmax
RDS(on) max < 0.47 Ω
ID
1
3
3
550 V
8.5 A
DPAK
1
2
TO-220
100% avalanche tested Low.
Figure 1. Internal schematic diagram
Description
These devices are made using the second generation of MDmesh™ technolo.
These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is theref.
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