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STP12IE90F4 - Emitter Switched Bipolar Transistor

Description

The STP12IE90F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications.

It is designed for use in Gate Driven based topologies.

Features

  • VCS(ON) 1V.
  • IC 12A RCS(ON) 0.083 W High voltage / high current Cascode configuration Low equivalent on resistance Very fast-switch up to 150 kHz Squared RBSOA up to 900V Very low Ciss driven by RG = 47Ω Very low turn-off cross over time TO220FP-4L.

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www.DataSheet4U.com STP12IE90F4 Emitter Switched Bipolar Transistor ESBT® 900 V - 12 A - 0.083 Ω General features VCS(ON) 1V ■ IC 12A RCS(ON) 0.083 W High voltage / high current Cascode configuration Low equivalent on resistance Very fast-switch up to 150 kHz Squared RBSOA up to 900V Very low Ciss driven by RG = 47Ω Very low turn-off cross over time TO220FP-4L ■ ■ ■ ■ ■ Applications ■ ■ Internal schematic diagrams Flyback SMPS for adapter Flyback / forward SMPS for desktop Description The STP12IE90F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications. It is designed for use in Gate Driven based topologies.
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