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STP13NK60FP Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Download the STP13NK60FP datasheet PDF. This datasheet also includes the STP13NK60Z variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (STP13NK60Z_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Overview

www.DataSheet4U.com STP13NK60Z/FP, STB13NK60Z STB13NK60Z-1, STW13NK60Z N-CHANNEL 600V-0.48Ω-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE STP13NK60Z STP13NK60ZFP STB13NK60Z STB13NK60Z-1 STW13NK60Z s s s s s s VDSS 600 600 600 600 600 V V V V V RDS(on) < 0.55 Ω < 0.55 Ω < 0.55 Ω < 0.55 Ω < 0.55 Ω ID 13 13 13 13 13 A A A A A Pw 150 W 35 W 150 W 150 W 150 W TO-220 3 1 2 TYPICAL RDS(on) = 0.

Key Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/14 STP13NK60.

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