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STP13NM60N Datasheet

N-CHANNEL POWER MOSFET

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STF13NM60N, STI13NM60N
STP13NM60N, STU13NM60N
Datasheet
N-channel 600 V, 280 mΩ typ., 11 A MDmesh II Power MOSFETs
in a TO-220FP, I²PAK, TO-220 and IPAK packages
TAB
Features
3
12
TO-220FP
TAB
1 23
I2PAK
TAB
TO-220
1 23
3
12
IPAK
Order codes
VDS
RDS(on) max.
STF13NM60N
STI13NM60N
STP13NM60N
600 V
360 mΩ
STU13NM60N
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
ID
11 A
D(2, TAB)
Applications
• Switching applications
G(1)
S(3)
NG1D2TS3
Description
These devices are N-channel Power MOSFETs developed using the second
generation of MDmesh technology. These revolutionary Power MOSFETs associate a
vertical structure to the company’s strip layout to yield one of the world’s lowest on-
resistance and gate charge. They are therefore suitable for the most demanding
high-efficiency converters.
Product status link
STF13NM60N
STI13NM60N
STP13NM60N
STU13NM60N
DS6112 - Rev 6 - October 2020
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

STP13NM60N Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage
VGS
Gate-source voltage
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
IDM(2)
Drain current pulsed
PTOT
Total power dissipation at TC = 25 °C
dv/dt(3)
Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s, TC = 25 °C)
TJ
Operating junction temperature range
Tstg
Storage temperature range
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 11 A, di/dt ≤ 400 A/μs, VDD = 80% V(BR)DSS.
TO-220FP
11(1)
6.9(1)
44(1)
25
2.5
Value
I²PAK, TO-220, IPAK
600
±25
11
6.9
44
90
15
-55 to 150
Unit
V
V
A
A
W
V/ns
kV
°C
°C
Symbol
Rthj-case
Rthj-a
Table 2. Thermal data
Parameter
Thermal resistance junction-case
TO-220FP
5
Value
I²PAK, TO-220
1.39
Thermal resistance junction-ambient
62.5
IPAK
100
Unit
°C/W
°C/W
Table 3. Avalanche characteristics
Symbol
IAS
EAS
Parameter
Avalanche current, repetitive or not repetitive
(pulse width limited by TJ max)
Single-pulse avalanche energy
(starting TJ = 25 °C, ID = IAS, VDD = 50 V)
Value
Unit
3.5
A
200
mJ
DS6112 - Rev 6
page 2/20


Part Number STP13NM60N
Description N-CHANNEL POWER MOSFET
Maker ST Microelectronics
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STP13NM60N Datasheet PDF






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