STP13NM60N
Overview
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest onresistance and gate charge.
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance ID 11 A D(2, TAB)
