STP15810
Description
This N-channel Power MOSFETs utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Key Features
- Internal ' 7$% Order code STP15810 VDS RDS(on)max ID PTOT 100 V 0.0042 Ω 110 A 250 W
- 100% avalanche tested
- Ultra low on-resistance
