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STP16N65M5 - N-channel Power MOSFET

General Description

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

Key Features

  • Type STF16N65M5 STI16N65M5 STP16N65M5 STU16N65M5 STW16N65M5 VDSS @ TJmax RDS(on) max 710 V < 0.279 Ω.
  • Worldwide best RDS(on).
  • Higher VDSS rating.
  • High dv/dt capability.
  • Excellent switching performance.
  • Easy to drive.
  • 100% avalanche tested ID 12 A TAB TAB 3 2 1 TO-220FP 123 I²PAK 3 2 1 TO-220 TAB IPAK 3 2 1 3 2 1 TO-247 Figure 1. Internal schematic diagram.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF16N65M5, STI16N65M5 STP16N65M5,STU16N65M5,STW16N65M5 N-channel 650 V, 0.230 Ω, 12 A MDmesh™ V Power MOSFET in TO-220FP, I²PAK, TO-220, IPAK, TO-247 Features Type STF16N65M5 STI16N65M5 STP16N65M5 STU16N65M5 STW16N65M5 VDSS @ TJmax RDS(on) max 710 V < 0.279 Ω ■ Worldwide best RDS(on) ■ Higher VDSS rating ■ High dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested ID 12 A TAB TAB 3 2 1 TO-220FP 123 I²PAK 3 2 1 TO-220 TAB IPAK 3 2 1 3 2 1 TO-247 Figure 1.