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STP17NK40Z - N-CHANNEL Power MOSFET

General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Key Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/10 www. DataS.

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Full PDF Text Transcription for STP17NK40Z (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STP17NK40Z. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com N-CHANNEL 400V - 0.23Ω - 15A TO-220/TO-220FP Zener-Protected SuperMESH™Power MOSFET TYPE STP17NK40Z STP17NK40ZFP s s s s s s STP17NK40Z - STP17NK40ZFP...

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FET TYPE STP17NK40Z STP17NK40ZFP s s s s s s STP17NK40Z - STP17NK40ZFP VDSS 400 V 400 V RDS(on) < 0.25 Ω < 0.25 Ω ID 15 A 15 A Pw 150 W 35 W TYPICAL RDS(on) = 0.23 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY 3 1 2 TO-220 TO-220FP DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.