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STP20N65M5 - N-channel Power MOSFET

General Description

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

' 3 !-V Table 1.

Overview

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 N-channel 650 V, 0.160 Ω typ.

Key Features

  • Order codes STB20N65M5 STI20N65M5 STP20N65M5 STW20N65M5 VDS @ TJmax RDS(on) max ID 710 V 0.19 Ω 18 A.
  • Worldwide best RDS(on).
  • area.
  • Higher VDSS rating and high dv/dt capability.
  • Excellent switching performance.
  • 100% avalanche tested.