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STP28NM60ND Datasheet N-Channel MOSFET

Manufacturer: STMicroelectronics

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General Description

These FDmesh™ II Power MOSFETs with 6  intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ $0Y technology.

Utilizing a new strip-layout vertical structure, these revolutionary devices

Overview

STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND N-channel 600 V, 0.13 Ω typ., 23 A FDmesh™ II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data TAB 2 3 1 D2PAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 3 2 1 TO-247 Figure 1.

Key Features

  • Order codes VDS @ TJ max. RDS(on) max ID STB28NM60ND STF28NM60ND 650 V STP28NM60ND 0.150 Ω 23 A STW28NM60ND.
  • Intrinsic fast-recovery body diode.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • Extremely high dv/dt and avalanche capabilities.

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