STP2N60
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STP2N60 STP2N60FI
- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE STP2N60 STP2N60FI s s s s s
V DSS 600 V 600 V
R DS( on) < 3.5 Ω < 3.5 Ω
ID 2.9 A 2.2 A
TYPICAL RDS(on) = 3.2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100o C APPLICATION ORIENTED CHARACTERIZATION TO-220
3 1 2 1 2
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter STP2N60 VD S V DG R V GS ID ID ID M(
- ) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o...
