STMicroelectronics STP30N65DM6AG
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.| Part No. | STP30N65DM6AG |
|---|---|
| Datasheet | STP30N65DM6AG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STP30N65DM6AG VDS 650 V RDS(on) max. 115 mΩ ID 28 A● AEC-Q101 qualified
● Fast-recovery body diode
● Lower RDS(on) per area vs previous generation
● Low gate charge, input capacitance and resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected
APPLICATIONS
● Switching applicationsDESCRIPTION
Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STP30N65DM6AG Product summary Order code STP30N65DM6AG Marking 30N65DM6 Package TO-220 Packing Tube DS13373 - Rev 2 - June 2021 For further information contact your local STMicroelectronics sales office. STP30N65DM6AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter...
