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STMicroelectronics Electronic Components Datasheet

STP30NE03LFP Datasheet

N - CHANNEL POWER MOSFET

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STP30NE03L
® STP30NE03LFP
N - CHANNEL 30V - 0.028 - 30A TO-220/TO-220FP
STripFETPOWER MOSFET
TYPE
VDSS
RDS( on )
STP30NE03L
S TP30N E03LF P
30 V
30 V
< 0.04
< 0.04
s TYPICAL RDS(on) = 0.028
s 100% AVALANCHE TESTED
s LOW GATE CHARGE
s LOW THRESHOLD DRIVE
ID
30 A
17 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
www.DataSheet4U.com
APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Pa ram et er
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 k)
VGS
ID
ID
IDM()
Ptot
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
VISO I nsulation W ithstand Voltage (DC)
Ts tg Storage T emperature
Tj Max. O perating Junct ion T emperature
() Pulse width limited by safe operating area
June 1999
Va l u e
STP30NE03L STP30NE03LFP
30
30
± 20
30 17
21 12
120 68
70 25
0.47
0.17
2000
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/9


STMicroelectronics Electronic Components Datasheet

STP30NE03LFP Datasheet

N - CHANNEL POWER MOSFET

No Preview Available !

STP30NE03L/FP
THERMAL DATA
Rthj-case
R th j -a mb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
T O - 220
T O - 22 0F P
2.14
6
6 2. 5
0. 5
3 00
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
15
250
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
30
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
ID(o n)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 5 V I D = 15 A
Resistance
VGS = 10 V ID = 15 A
On State Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
1
30
Typ.
1.75
0.042
0.028
Max.
2.5
0.055
0.04
Unit
V
A
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID =15 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
5
Typ.
15
Max.
Unit
S
800 pF
205 pF
70 pF
2/9


Part Number STP30NE03LFP
Description N - CHANNEL POWER MOSFET
Maker ST Microelectronics
Total Page 9 Pages
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