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STMicroelectronics Electronic Components Datasheet

STP30NE06FP Datasheet

N-CHANNEL Power MOSFET

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STP30NE06
® STP30NE06FP
N - CHANNEL 60V - 0.042 - 30A - TO-220/TO-220FP
STripFETPOWER MOSFET
TYPE
STP30NE06
STP30NE06FP
V DSS
60 V
60 V
RDS(on)
< 0.050
< 0.050
ID
30 A
17 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.042
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s 175oC OPERATING TEMPERATURE
s HIGH dV/dt CAPABILITY
s APPLICATION ORIENTED
CHARACTERIZATION
3
2
1
3
2
1
www.DataSheet4U.com
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature Size”
process whereby a single body is implanted on a
strip layout structure. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remarka-
ble manufacturing reproducibility.
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V DS
V DGR
VGS
ID
ID
IDM ()
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
VISO I nsulation W ithstand Voltage (DC)
dV/dt Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
January 1999
Va l u e
Un it
STP30NE06 STP30NE06FP
60 V
60 V
± 20
V
30 17 A
21 12 A
120 68 A
80
0.53
30 W
0.2 W /o C
2000
V
7
-65 to 175
175
( 1) ISD 30 A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX
V/ns
oC
oC
1/6


STMicroelectronics Electronic Components Datasheet

STP30NE06FP Datasheet

N-CHANNEL Power MOSFET

No Preview Available !

STP30NE06/FP
THERMAL DATA
Rthj-case
R th j -a mb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
T O - 220
T O - 22 0F P
1.87
5
6 2. 5
0. 5
3 00
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 30 V)
Max Value
30
100
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
60
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
ID(o n)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 15 A
Resistance
On State Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
2
Typ.
3
0.042
Max.
4
0.050
Unit
V
30 A
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID =15 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
7
Typ.
13
Max.
Unit
S
1450
200
45
pF
pF
pF
2/6


Part Number STP30NE06FP
Description N-CHANNEL Power MOSFET
Maker STMicroelectronics
Total Page 6 Pages
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