STP30NE06
® STP30NE06FP
N - CHANNEL 60V - 0.042 Ω - 30A - TO-220/TO-220FP
STripFET™ POWER MOSFET
TYPE
STP30NE06
STP30NE06FP
V DSS
60 V
60 V
RDS(on)
< 0.050 Ω
< 0.050 Ω
ID
30 A
17 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.042 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s 175oC OPERATING TEMPERATURE
s HIGH dV/dt CAPABILITY
s APPLICATION ORIENTED
CHARACTERIZATION
3
2
1
3
2
1
www.DataSheet4U.com
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature Size”
process whereby a single body is implanted on a
strip layout structure. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remarka-
ble manufacturing reproducibility.
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V DS
V DGR
VGS
ID
ID
IDM (•)
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
VISO I nsulation W ithstand Voltage (DC)
dV/dt Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
’
January 1999
Va l u e
Un it
STP30NE06 STP30NE06FP
60 V
60 V
± 20
V
30 17 A
21 12 A
120 68 A
80
0.53
30 W
0.2 W /o C
2000
V
7
-65 to 175
175
( 1) ISD ≤ 30 A, di/dt ≤300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
oC
oC
1/6
