STP32N06LFI Datasheet | STMicroelectronics

STP32N06L STP32N06LFI - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N06L STP32N06LFI .. s s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.055 Ω < 0.055 Ω ID 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100o C LOW GATE CHARGE HIGH CURRENT CAPABILITY LOGIC LEVEL PATIBLE INPUT o 175 C OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 TO-220 ISOWATT220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP32N06L VD S V DG R V GS ID ID ID M( - ) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP32N06LFI 60 60 ± 15 32 22 128 105 0.7  -65 to 175 175 19 13 128 40 0.27 2000 Unit V V V A A A W W/o C V o o (- ) Pulse width limited by safe operating area November 1996 1/10 STP36N06L/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 1.43 62.5 0.5 300 ISOWATT220 3.75 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS .. Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 25 V) Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c =...