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STMicroelectronics Electronic Components Datasheet

STP36NF06 Datasheet

N-CHANNEL MOSFET TRANSISTOR

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ataSheNet-4CUH.AcNomNEL 60V - 0S.0T3ri2pFE-T30AII STPOOT-SWP22T3E06PR/TN3MO6FO-N20S26FF0F0FEP6PTTYPE
VDSS
RDS(on)
.DSTP36NF06
wSTP36NF06FP
60 V
60 V
<0.040
<0.040
w s TYPICAL RDS(on) = 0.032
w s EXCEPTIONAL dv/dt CAPABILITY
ms 100% AVALANCHE TESTED
s APPLICATION ORIENTED
oCHARACTERIZATION
ID
30 A
18 A(*)
.cDESCRIPTION
This Power MOSFET is the latest development of
USTMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
t4shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
eremarkable manufacturing reproducibility.
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
heAPPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
ataSOrdering Information
SALES TYPE
.DSTP36NF06
STP36NF06FP
MARKING
STP36NF06
STP36NF06FP
PACKAGE
TO-220
TO-220FP
PACKAGING
TUBE
TUBE
wABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
wVDS Drain-source Voltage (VGS = 0)
mVDGR
Drain-gate Voltage (RGS = 20 k)
w oVGS Gate- source Voltage
.cID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
t4UIDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
eDerating Factor
edv/dt (1) Peak Diode Recovery voltage slope
ShEAS (2) Single Pulse Avalanche Energy
taTstg Storage Temperature
Tj Max. Operating Junction Temperature
a(•) Pulse width limited by safe operating area.
.D(*) Current Limited by Package
wwwOctober 2003
STP36NF06
30
21
120
70
0.47
Value
STP36NF06FP
60
60
± 20
18(*)
12
72
25
0.17
20
200
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD 36A, di/dt 400A/µs, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 oC, ID = 18 A, VDD = 45V
1/9


STMicroelectronics Electronic Components Datasheet

STP36NF06 Datasheet

N-CHANNEL MOSFET TRANSISTOR

No Preview Available !

STP36NF06 STP36NF06FP
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
(1.6 mm from case, for 10 sec)
Max
Max
TO-220 TO-220FP
2.14 6
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ.
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
60
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Max.
1
10
±100
Unit
V
µA
µA
nA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
ID = 15 A
Min.
2
Typ. Max.
0.032 0.040
Unit
V
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 25 V
ID = 15 A
VDS = 25V f = 1 MHz VGS = 0
Min.
Typ.
12
690
170
68
Max.
Unit
S
pF
pF
pF
2/9


Part Number STP36NF06
Description N-CHANNEL MOSFET TRANSISTOR
Maker ST Microelectronics
Total Page 9 Pages
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