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STP3N62K3 Datasheet

N-channel Power MOSFET

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STB3N62K3, STP3N62K3
Datasheet
N-channel 620 V, 2.2 Ω typ., 2.7 A MDmesh™ K3 Power MOSFETs in
D2PAK and TO-220 packages
Features
TAB
Order code
VDS
RDS(on)max.
ID
Package
TAB
t(s) 3
1
c D2PAK
TO-220
1 23
Produ D(2, TAB)
olete G(1)
- Obs S(3)
AM01475V1
roduct(s) Product status link
te P STB3N62K3
Obsole STP3N62K3
STB3N62K3
STP3N62K3
620 V
2.5 Ω
• 100% avalanche tested
• Extremely high dv/dt capability
• Very low intrinsic capacitance
• Improved diode reverse recovery characteristics
• Zener-protected
2.7 A
D2PAK
TO-220
Applications
• Switching applications
Description
These MDmesh™ K3 Power MOSFETs are the result of improvements applied to
STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical
structure. These devices boast an extremely low on-resistance, superior dynamic
performance and high avalanche capability, rendering them suitable for the most
demanding applications.
DS12625 - Rev 1 - July 2018
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

STP3N62K3 Datasheet

N-channel Power MOSFET

No Preview Available !

STB3N62K3, STP3N62K3
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
620
V
VGS
Gate-source voltage
±30
V
ID
Drain current (continuous) at TC = 25 °C
) ID
Drain current (continuous) at TC = 100 °C
t(s IDM (1)
Drain current (pulsed)
uc PTOT
Total dissipation at TC = 25 °C
rod ESD
Gate-source human body model
(C = 100 pF, R = 1.5 kΩ)
P dv/dt (2) Peak diode recovery voltage slope
te Tj
Operating junction temperature range
le Tstg
Storage temperature range
so 1. Pulse width limited by safe operating area.
b 2. ISD ≤ 2.7 A, di/dt ≤ 200 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
2.7
1.7
10.8
45
2.5
9
-55 to 150
t(s) - O Table 2. Thermal data
c Symbol
Parameter
rodu Rthj-case Thermal resistance junction-case
P Rthj-amb Thermal resistance junction-ambient
te Rthj-pcb(1) Thermal resistance junction-pcb
le 1. When mounted on 1inch² FR-4 board, 2 oz Cu.
Value
D2PAK
TO-220
2.78
62.5
30
Obso Table 3. Avalanche characteristics
A
A
A
W
kV
V/ns
°C
Unit
°C/W
°C/W
°C/W
Symbol
Parameter
Value
Unit
IAR(1)
Avalanche current, repetitive or not-repetitive
2.7
A
EAS(2)
Single pulse avalanche energy
100
mJ
1. Pulse width limited by Tj max.
2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V.
DS12625 - Rev 1
page 2/19


Part Number STP3N62K3
Description N-channel Power MOSFET
Maker STMicroelectronics
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STP3N62K3 Datasheet PDF






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