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STMicroelectronics Electronic Components Datasheet

STP3NA100FI Datasheet

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

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STP3NA100
STP3NA100FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
VDSS
RDS(on)
ID
STP3NA100
STP3NA100FI
1000 V
1000 V
<5
<5
3.5 A
2A
s TYPICAL RDS(on) = 4.3
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-220
3
2
1
TO-220FI
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
IDM()
Ptot
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
VISO
Tstg
Insulation Withstand Voltage (DC)
Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
February 1998
Value
STP3NA100 STP3NA100FI
1000
1000
± 30
3.5 2.0
2.0 1.2
14 14
110 45
0.88
0.36
2000
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/9


STMicroelectronics Electronic Components Datasheet

STP3NA100FI Datasheet

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

No Preview Available !

STP3NA100/FI
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
1.14
ISOWATT220
2.78
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
3.5
170
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
1000
Typ.
Max.
25
250
± 100
Unit
V
µA
µA
nA
ON ()
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 1.5 A
Resistance
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
2.25
Typ.
3
Max.
3.75
Unit
V
4.3 5
3.5 A
DYNAMIC
Symbol
gfs ()
Ciss
C oss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 1.5 A
Min.
1.5
Typ.
3
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
1100
85
20
1430
110
30
pF
pF
pF
2/9


Part Number STP3NA100FI
Description N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Maker ST Microelectronics
Total Page 9 Pages
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