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STP3NA50FI - N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

Download the STP3NA50FI datasheet PDF. This datasheet also covers the STP3NA50 variant, as both devices belong to the same n - channel enhancement mode fast power mos transistor family and are provided as variant models within a single manufacturer datasheet.

Description

This series of POWER MOSFETS represents the most advanced high voltage technology.

The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

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Note: The manufacturer provides a single datasheet file (STP3NA50_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP3NA50 STP3NA50FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP3NA50 STP3NA50FI s s s s s s s VDSS 500 V 500 V R DS(on) <3Ω <3Ω ID 3.3 A 2.3 A TYPICAL RDS(on) = 2.4 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 3 1 2 3 1 2 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
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