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STMicroelectronics Electronic Components Datasheet

STP3NB90 Datasheet

N - CHANNEL PowerMESH MOSFET

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t4U.com STP3NB90
ee STP3NB90FP
Sh N-CHANNEL 900V - 4 - 3.5 A TO-220/TO-220FP
ta PowerMeshMOSFET
.DaTYPE
wSTP3NB90
ww STP3NB90FP
VDSS
900 V
900 V
RDS(on)
< 4.2
< 4.2
ID
3.5 A
3.5 A
Pw
110 W
35 W
s TYPICAL RDS(on) = 4
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
ms GATE CHARGE MINIMIZED
os VERY LOW INTRINSIC CAPACITANCES
.cDESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an ad-
Uvanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
t4coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
eunrivalled gate charge and switching characteris-
tics.
eAPPLICATIONS
hs HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
Ss DC-AC CONVERTERS FOR WELDING
taEQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
w.DaORDERING INFORMATION
wwSALES TYPE
MARKING
PACKAGE
PACKAGING
STP3NB90
STP3NB90FP
P3NB90
P3NB90FP
October 2002
TO-220
TO-220FP
www.DatTTaUUSBBEEheet41U/10.com


STMicroelectronics Electronic Components Datasheet

STP3NB90 Datasheet

N - CHANNEL PowerMESH MOSFET

No Preview Available !

STP3NB90 - STP3NB90FP
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( )
Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj Operating Junction Temperature
Tstg Storage Temperature
()Pulse width limited by safe operating area
(1) ISD3.5A, di/dt200 A/µs, VDDV(BR)DSS, TjTjMAX
(*)Limited only by maximum temperature allowed
Value
STP3NB90 STP3NB90FP
900
900
±30
3.5 3.5 (*)
2.2 1.26 (*)
14 14 (*)
110 30
0.87 0.24
4.5
- 2000
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
–55 to 150
°C
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
TO -220
1.14
TO-220FP
4.2
62.5
300
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
3.5
230
Unit
A
mJ
2/10


Part Number STP3NB90
Description N - CHANNEL PowerMESH MOSFET
Maker ST Microelectronics
Total Page 10 Pages
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