| Part number | STP40N10 |
|---|---|
| Datasheet | STP40N10-STMicroelectronics.pdf |
| File Size | 194.60 KB |
| Manufacturer | STMicroelectronics |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
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Unit V 250 µA 1000 µA ± 100 nA ON (∗) Symb ol VG S(th) RDS(on) ID(on) Parameter Test Conditions Gate Threshold Voltage VDS = VGS ID = 250 µA Static Drain-source On VGS = 10V ID = 20 A R esist anc e VGS = 10V ID = 20 A Tc = 100 oC On St ate Drain Current VDS > ID( on) x RD S(on) max VGS = 10 V Min. 08 Unit V Ω Ω A DYNAMIC Symb ol gfs (∗) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output...
See all STMicroelectronics datasheets
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