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STP40NE03L-20 Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

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STP40NE03L-20
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE” POWER MOSFET
TYPE
ST P40NE03L-20
VDSS
30 V
RDS(on)
<0.020
ID
40 A
s TYPICAL RDS(on) = 0.014
s EXCEPTIONAL dv/dt CAPABILITY
s LOW GATE CHARGE A 100 oC
s APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
SGS-THOMSON unique ”Single Feature Size
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS IN HIGH
PERFORMANCE VRMs
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
V D GR
V GS
ID
ID
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM() Drain Current (pulsed)
Pto t Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tst g St orage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
Va l u e
Unit
30 V
30 V
± 15
V
40 A
28 A
160 A
80
0.53
W
W/oC
7
-65 to 175
175
(1) ISD 40 A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX
V/ns
oC
oC
October 1997
1/8
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STMicroelectronics Electronic Components Datasheet

STP40NE03L-20 Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

STP40NE03L-20
THERMAL DATA
Rt hj-ca se
Rt hj- amb
Rthc- si nk
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
1 .8 8
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
S ymb ol
IAR
E AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR , VDD = 15V)
Max Valu e
40
200
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
S ymb ol
V(BR)DSS
IDSS
IGSS
P a ra m et er
Test Conditions
Dr ain- sou rc e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero G ate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
oC
Tc = 125
Gate-body Leakage
Current (VDS = 0)
VGS = ± 15 V
Min.
30
Typ .
Max.
Unit
V
1 µA
10 µA
± 100 nA
ON ()
S ymb ol
V GS(th )
RDS( o n )
ID(o n)
P a ra m et er
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 20 A
Resistance
VGS = 5V ID = 20 A
On St ate Drain Current VDS > ID(on) x RDS(on) max
VGS = 10 V
Min.
1
Typ .
1.8
Max.
2.5
Unit
V
0.014 0.02
0.023
40
A
DYNAMIC
S ymb ol
gfs ()
Ciss
Coss
Crss
P a ra m et er
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 20 A
Min.
15
Typ. Max.
20
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
1850
450
160
2400
590
210
pF
pF
pF
2/8
Free Datasheet http://www.Datasheet4U.com


Part Number STP40NE03L-20
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Maker STMicroelectronics
Total Page 8 Pages
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