Datasheet Details
| Part number | STP40NS15 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 105.89 KB |
| Description | N-CHANNEL MOSFET |
| Download | STP40NS15 Download (PDF) |
|
|
Overview: N-CHANNEL 150V - 0.042Ω - 40A TO-220 MESH OVERLAY™ MOSFET PRELIMINARY DATA TYPE STP40NS15 s s s s STP40NS15 VDSS 150 V RDS(on) <0.052Ω ID 40A TYPICAL RDS(on) = 0.
| Part number | STP40NS15 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 105.89 KB |
| Description | N-CHANNEL MOSFET |
| Download | STP40NS15 Download (PDF) |
|
|
|
This powermos MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process.
This technology matches and improves the performances compared with standard parts from various sources.
TO-220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s PRIMARYSWITCH IN ISOLATED DC-DC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q ) PTOT dv/dt Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Value 150 150 ±20 40 25 160 140 0.933 9 –65 to 175 175 Unit V V V A A A W W/°C V/ns °C °C Tj Max.
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