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STMicroelectronics Electronic Components Datasheet

STP40NS15 Datasheet

N-CHANNEL MOSFET

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STP40NS15
N-CHANNEL 150V - 0.042- 40A TO-220
MESH OVERLAY™ MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STP40NS15
150 V <0.052
40A
s TYPICAL RDS(on) = 0.042
s EXTREMELY HIGH dv/dt CAPABILITY
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
This powermos MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAYprocess. This technology matches
and improves the performances compared with
standard parts from various sources.
3
2
1
TO-220
APPLICATIONS
s HIGH CURRENT SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s PRIMARYSWITCH IN ISOLATED DC-DC
CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
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(•)Pulse width limited by safe operating area
Value
150
150
±20
40
25
160
140
0.933
9
–65 to 175
175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
October 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/6


STMicroelectronics Electronic Components Datasheet

STP40NS15 Datasheet

N-CHANNEL MOSFET

No Preview Available !

STP40NS15
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Rthc-sink Thermal Resistance Case-sink Typ
Tl Maximum Lead Temperature For Soldering Purpose
1.07
62.5
0.5
300
°C/W
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
40
500
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
150
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±20V
±100
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 40 A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
2
Typ.
3
0.044
Max.
4
0.052
Unit
V
40 A
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 20A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
20
Max.
Unit
S
2400
380
160
pF
pF
pF
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2/6


Part Number STP40NS15
Description N-CHANNEL MOSFET
Maker STMicroelectronics
Total Page 6 Pages
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