Datasheet4U Logo Datasheet4U.com

STP43N60DM2 - N-channel Power MOSFET

General Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series.

Key Features

  • Order code STP43N60DM2 VDS @ TJmax. 650 V RDS(on) max. 0.093 Ω ID PTOT 34 A 250 W Figure 1: Internal schematic diagram.
  • Fast-recovery body diode.
  • Extremely low gate charge and input capacitance.
  • Low on-resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STP43N60DM2 N-channel 600 V, 0.085 Ω typ., 34 A MDmesh™ DM2 Power MOSFET in a TO-220 package Datasheet - production data Features Order code STP43N60DM2 VDS @ TJmax. 650 V RDS(on) max. 0.093 Ω ID PTOT 34 A 250 W Figure 1: Internal schematic diagram • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.