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STMicroelectronics Electronic Components Datasheet

STP45N10 Datasheet

N-Channel Power MOS Transistor

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STP45N10
® STP45N10FI
N - CHANNEL 100V - 0.027- 45A - TO-220/TO-220FI
POWER MOS TRANSISTOR
TYPE
STP45N10
STP45N10FI
VDSS
100 V
100 V
RDS(on)
< 0.035
< 0.035
ID
45 A
24 A
s TYPICAL RDS(on) = 0.027
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175 oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
3
2
1
TO-220
3
2
1
ISOWATT220
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s DC-DC & DC-AC CONVERTERS
www.DataSheet4U.coms AUTOMOTIVE ENVIRONMENT (INJECTION,
INTERNAL SCHEMATIC DIAGRAM
ABS, AIR-BAG, LAMP DRIVERS. Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM()
Ptot
VISO
Tstg
Tj
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
June 1998
Value
STP45N10 STP45N10FI
100
100
± 25
45 24
32 17
180 180
150 45
1 0.3
2000
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/10
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STMicroelectronics Electronic Components Datasheet

STP45N10 Datasheet

N-Channel Power MOS Transistor

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STP45N10/FI
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO220
1
ISOWATT220
3.33
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 25 V)
Max Value
45
400
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Min. Typ.
Drain-source
Breakdown Voltage
ID = 250 µA
VGS = 0
100
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8
VDS = Max Rating x 0.8 Tc = 125 oC
Gate-Source Leakage VGS = ± 20 V
www.DataSheet4U.comCurrent (VDS = 0)
Max.
10
1
50
± 100
Unit
V
µA
µA
mA
ON ()
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10 V ID = 22.5 A
Resistance
VGS = 10 V ID = 22.5 A Tc = 100oC
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
2
45
Typ.
3
Max.
4
0.027 0.035
0.07
Unit
V
A
DYNAMIC
Symbol
gfs ()
Ciss
C oss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
Min.
VDS > ID(on) x RDS(on)max ID = 22.5 A 20
Typ.
40
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
4100
600
150
5200
800
220
pF
pF
pF
2/10
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Part Number STP45N10
Description N-Channel Power MOS Transistor
Maker ST Microelectronics
Total Page 10 Pages
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