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STMicroelectronics Electronic Components Datasheet

STP45NF3LLFP Datasheet

N-Channel POWER MOSFET

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STP45NF3LL - STP45NF3LLFP
STB45NF3LL
N-CHANNEL 30V - 0.014- 45A TO-220 - TO220FP - D2PAK
STripFET II™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STP45NF3LL
STP45NF3LLFP
STB45NF3LL
30 V
30 V
30 V
<0.018
<0.018
<0.018
45 A
45 A
27 A
s TYPICAL RDS(on) = 0.014@4.5V
s OPTIMAL RDS(ON) x Qg TRADE-OFF @ 4.5V
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
s ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
3
2
1
TO-220
3
1
D2PAK
3
2
1
DESCRIPTION
TO-220FP
This application specific Power MOSFET is the
third genaration of STMicroelectronics unique
“Single Feature Size™” strip-based process. The
INTERNAL SCHEMATIC DIAGRAM
resulting transistor shows the best trade-off be-
tween on-resistance ang gate charge. When used
as high and low side in buck regulators, it gives the
best performance in terms of both conduction and
www.DataSheet4U.comswitching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
EAS (1) Single Pulse Avalanche Energy
Viso
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
November 2002
Value
TO-220/D2PAK
TO-220FP
30
30
± 16
45 27
32 19
180 108
70 25
0.46 0.167
241
-- 2500
– 55 to 175
(1) Starting Tj= 25°C, ID= 22.5A, VDD= 24V
Unit
V
V
V
A
A
A
W
W/°C
mJ
V
°C
1/11
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STMicroelectronics Electronic Components Datasheet

STP45NF3LLFP Datasheet

N-Channel POWER MOSFET

No Preview Available !

www.DataSheet4U.com
STP45NF3LL - STB45NF3LL
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
TO-220
D2PAK
2.14
TO-220FP
6
62.5
300
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
30
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16 V
±100
°C/W
°C/W
°C
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10 V, ID = 22.5 A
VGS = 4.5V, ID = 22.5 A
Min.
1
Typ. Max.
0.014
0.016
0.018
0.020
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
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Parameter
Test Conditions
Min. Typ.
Forward Transconductance VDS =15 V , ID = 22.5 A
20
Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
800
Output Capacitance
250
Reverse Transfer
Capacitance
60
Max.
Unit
V
Unit
S
pF
pF
pF
2/11
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Part Number STP45NF3LLFP
Description N-Channel POWER MOSFET
Maker ST Microelectronics
Total Page 11 Pages
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