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STMicroelectronics Electronic Components Datasheet

STP50N06 Datasheet

N-Channel Enhancement Mode Power MOS Transistor

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t4U.com STP50N06
e STP50N06FI
She N - CHANNEL ENHANCEMENT MODE
ta POWER MOS TRANSISTOR
w.DaTYPE
w STP50N06
w STP50N06FI
VDSS
60 V
60 V
RDS(on)
< 0.028
< 0.028
ID
50 A
27 A
s TYPICAL RDS(on) = 0.022
s AVALANCHE RUGGED TECHNOLOGY
ms 100% AVALANCHE TESTED
os REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
.cs HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
UCHARACTERIZATION
t4APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
es SOLENOID AND RELAY DRIVERS
s REGULATORS
es DC-DC & DC-AC CONVERTERS
hs MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
SABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ataABSOLUTE MAXIMUM RATINGS
.DSymbol
Parameter
wVDS
VDGR
wVGS
wID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Value
STP50N06
STP50N06FI
60
60
± 20
50 27
Unit
V
V
V
A
ID Drain Current (continuous) at Tc = 100 oC
IDM() Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
July 1993
35 19
om200 200
.c150 45
U1 0.3
t42000
ee-65 to 175
www.DataSh175
A
A
W
W/oC
V
oC
oC
1/10


STMicroelectronics Electronic Components Datasheet

STP50N06 Datasheet

N-Channel Enhancement Mode Power MOS Transistor

No Preview Available !

STP50N06/FI
THERMAL DATA
Rthj-case
Rthj-amb
Rt h c- sin k
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
1
ISOWATT220
3.33
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
EAR
IAR
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 25 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
Max Value
50
400
100
35
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
60
Typ.
Max.
Unit
V
250
1000
± 100
µA
µA
nA
ON ()
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10 V ID = 25 A
Resistance
VGS = 10 V ID = 25 A Tc = 100oC
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
2
50
Typ.
2.9
0.022
Max.
4
0.028
0.056
Unit
V
A
DYNAMIC
Symbol
gfs ()
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 25 A
Min.
17
Typ.
22
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
1700
630
200
2200
850
260
pF
pF
pF
2/10


Part Number STP50N06
Description N-Channel Enhancement Mode Power MOS Transistor
Maker ST Microelectronics
Total Page 10 Pages
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