STMicroelectronics STP65N045M9
This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure.| Part No. | STP65N045M9 |
|---|---|
| Datasheet | STP65N045M9 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB TO-220 1 23 D(2, TAB) Order code VDS RDS(on) max. ID STP65N045M9 650 V 45 mΩ 54A● Worldwide best FOM RDS(on)*Qg among silicon-based devices
● Higher VDSS rating
● Higher dv/dt capability
● Excellent switching performance
● Easy to drive
● 100% avalanche tested
APPLICATIONS
G(1)● High efficiency switching applications
DESCRIPTION
S(3) AM01475v1_noZen The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency. Product status link STP65N045M9 Product summary Order code STP65N045M9 Marking 65N045M9 Package TO-220 Packing Tube DS13506 - Rev 6 - July 2024 For further information contact your local STMicroelectronics sales office. STP65N045M9 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (...
