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STP6N120K3 - N-channel MOSFET

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General Description

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.

These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.

3 2 1 TO-3PF TAB 3 2 1 TO-220 3 2 1 TO-247 Figure 1.

Overview

STFW6N120K3, STP6N120K3, STW6N120K3 N-channel 1200 V, 1.95 Ω typ.

Key Features

  • Order codes VDSS RDS(on) max ID Ptot STFW6N120K3 1200 V < 2.4 Ω 6 A 63 W STP6N120K3 1200 V < 2.4 Ω 6 A 150 W STW6N120K3 1200 V < 2.4 Ω 6 A 150 W.
  • 100% avalanche tested.
  • Extremely large avalanche performance.
  • Gate charge minimized.
  • Very low intrinsic capacitances.
  • Zener-protected.

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